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TVS Diode Arrays (SPA ? Diodes)
Low Capacitance ESD Protection - SP3012 Series
Absolute Maximum Ratings
Symbol
I PP
T OP
T STOR
Parameter
Peak Current (t p =8/20μs)
Operating Temperature
Storage Temperature
Value
4.0
-40 to 125
-55 to 150
Units
A
°C
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Characteristics (T OP =25 o C)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Diode Capacitance
Reverse StandoffVoltage
Reverse Leakage Current
Clamp Voltage 1
Dynamic Resistance
ESD Withstand Voltage 1
1
Diode Capacitance 1
V RWM
I LEAK
V C
R DYN
V ESD
C I/O-GND
C I/O-/O
I R ≤ 1μA
V R =5V, Any I/O to GND
I PP =1A, t p =8/20μs, Fwd
I PP =2A, t p =8/20μs, Fwd
(V C2 - V C1 ) / (I PP2 - I PP1 )
IEC61000-4-2 (Contact)
IEC61000-4-2 (Air)
Reverse Bias=0V, f=1 MHz
Reverse Bias=0V, f=1 MHz
±12
±25
6.6
7.0
0.4
0.5
0.3
5.0
1.5
V
μA
V
V
Ω
kV
kV
pF
pF
Note: Parameter is guaranteed by design and/or device characterization.
1
Capacitance vs. Bias Voltage
1.0
0.8
0.6
0.4
0.2
Insertion Loss (S21) I/O to GND
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
0.0
0.0
1.0
2.0 3.0
Bias Voltage (V)
4.0
5.0
-10
10
100
Frequency (MHz)
1000
Clamping Voltage vs. I PP
10.0
8.0
6.0
4.0
2.0
Transmission Line Pulsing(TLP) Plot
15
14
13
12
11
10
9
8
7
6
5
4
3
2
0.0
1
2
Current (A)
3
4
1
0
0
1
2
3
4
5 6 7 8
9
10
11
TLP Voltage (V)
SP3012 Series
2
?2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 09 2, 13
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